(9.00) c l + e d + pin #1 (anode) pin #2 (cathode) (2x) (nom) 1 2 4 3 c.l. optical .354 c l l c c l optical c.l. pin #3 (collector) pin #4 (emitter) .197 (5.00) .027 (.70) (2x) pins .020 (.51) (4x) sq. (typ) .394 (10.00) (2x) .020 (.50) .295 (7.50) .236 (6.00) .092 (2.35) .260 (6.60) .197 (5.00) min (4x) .100 (2.50) .551 (14.00) .100 (2.54) (2x) (typ) knob ?.026 (.66) (2x) notes 1. derate power dissipation linearly 1.67 mw/c above 25c. 2. rma flux is recommended. 3. methanol or isopropyl alcohols are recommended as cleaning agents. 4. soldering iron tip 1/16? (1.6mm) from housing. 1 of 4 100003a features no contact switching 5mm wide slot 0.5 mm aperture width opaque black plastic housing locating knobs on housing base for accurate mounting transistor output 2 3 14 schematic notes: 1. dimensions for all drawings are in inches (millimeters). 2. tolerance of ?.010 (.25) on all non-nominal dimensions unless otherwise specified. package dimensions QVE00118 phototransistor optical interrupter switch parameter symbol rating units operating temperature t opr -55 to +100 c storage temperature t stg -55 to +100 c soldering temperature (iron) (2,3) t sol-i 240 for 5 sec c soldering temperature (flow) (2,3) t sol-f 260 for 10 sec c emitter continuous forward current i f 60 ma reverse voltage v r 6v power dissipation (1) p d 150 mw sensor collector-emitter voltage v ceo 30 v emitter-collector voltage v eco 4.5 v collector current i c 20 ma power dissipation (1) p d 100 mw absolute maximum ratings (t a = 25 c unless otherwise specified)
electrical / optical characteristics (t a = 25 c ) 0 0 10 20 30 40 50 60 70 80 90 100 110 0.1 0.2 0.3 distance (mm) distance (mm) i ce normalized(%) 0.4 0.5 0.6 t a = 25?c i f = 20 ma v ce = 10 v t a = 25?c i f = 20 ma v ce = 10 v 0 0 10 20 30 40 50 60 70 80 90 100 110 0.25 0.5 0.75 1 1.25 1.5 1 .75 2 i ce normalized(%) 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 123456789101112 i ce (ma) t a = 25?c i f = 40 ma i f = 30 ma i f = 20 ma i f = 10 ma -50 -25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.9 temp(c) v ce (v) v ce normalized 25 50 75 100 i f = 10 ma, i c = 0.05 ma i f = 30 ma, i c = 0.15 ma normalized to i f = 20 ma, i c = 0.1 ma, t a = 25?c i f = 20 ma, i c = 0.1 ma fig. 1 collector current vs. shield distance fig. 2 collector current vs. shield distance fig. 3 collector-emitter voltage vs. collector current fig. 4 collector-emitter voltage vs. temperature 0 0 2 of 4 100003a parameter test conditions symbol min typ max units emitter forward voltage i f = 20ma v f 1.2 1.5 v reverse current v r = 4v i r 10 a peak emission wavelength i f = 20ma ! pe 940 n m sensor dark current v ce = 10v, i f = 0ma i d 200 na coupled collector current i f = 20ma, v ce = 10v i c(on) 0.5 14 ma collector emitter i f = 20ma, i c = 0 .1ma v ce (sat) 0.4 v saturation voltage rise time v cc = 5v, r l = 100 " t r ? s fall time i c = 5ma t f ? s typical performance curves QVE00118 phototransistor optical interrupter switch
t a = 25 ? c pw = 300 s prr = 100 s v cc = 5 v normalized to rl = 2k " 1 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 4.25 4.5 23 456 78910 t(off) t(off) normalized -55 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -40-20 0 20406080100 temp(c) i f (ma) i ce normalized normalized to i f = 20 ma, v ce = 5 v, t a = 25 ? c i f = 100 ma i f = 5 ma 0 0 0.5 1 1.5 2 2.5 3 5 10152025303540455055 t a = 25 ? c v ce = 10 v normalized to i f = 20 ma i ce normalized t a = 25 ? c pw = 300 s prr = 100 s v cc = 5 v normalized to rl = 2k " 1 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 23 456 78910 t(on) t(off) normalized rl(k " ) rl(k " ) 0 0 5 10 15 20 25 30 35 40 45 50 55 0.2 0.4 0.6 0.8 v f (v) i f (ma) 1.2 1.4 1.6 1.81 t a = 30 ? c t a = 25 ? c t a = 70 ? c fig. 5 collector current vs. temperature fig. 6 collector current vs. forward current fig. 7 rise time vs. load resistance fig. 9 forward voltage vs. forward current fig. 8 fall time vs. load resistance i f = 60 ma i f = 30 ma i f = 20 ma i f = 10 ma 3 of 4 100003a QVE00118 phototransistor optical interrupter switch
life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. www.fairchildsemi.com ? 2000 fairchild semiconductor corporation 4 of 4 QVE00118 phototransistor optical interrupter switch 100003a
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